Datasheet4U Logo Datasheet4U.com

TK10Q60W Silicon N-Channel MOSFET

TK10Q60W Description

MOSFETs Silicon N-Channel MOS (DTMOS) TK10Q60W 1.Applications * Switching Voltage Regulators 2..

TK10Q60W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10Q60W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4.

📥 Download Datasheet

Preview of TK10Q60W PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TK100A10N1 - Silicon N-Channel MOSFET (Toshiba)
  • TK100F04K3 - Silicon N-Channel MOSFET (Toshiba)
  • TK100F06K3 - Silicon N-Channel MOSFET (Toshiba)
  • TK100L60W - Silicon N-Channel MOSFET (Toshiba)
  • TK10415 - CERAMIC SPEAKER DRIVE AMPLIFIER (TOKO)
  • TK10416 - DYNAMIC SPEAKER DRIVE AMPLIFIER (TOKO)
  • TK10417 - POWER AMPLIFIER (TOKO)
  • TK10420 - Dual Conversion FM IF Amplifier (Toko America)

📌 All Tags

Silicon N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor TK10Q60W-like datasheet