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TK3A65D Silicon N-Channel MOSFET

TK3A65D Description

MOSFETs Silicon N-Channel MOS (π-MOS) TK3A65D 1.Applications * Switching Voltage Regulators 2..

TK3A65D Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.93 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK3A65D 1: Gate (G) 2:

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Silicon N-Channel MOSFET Toshiba Semiconductor
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