TGA2625-CP Datasheet (TriQuint Semiconductor)

TGA2625-CP, GaN Power Amplifier

TriQuint’s TGA2625-CP is a packaged high-power X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process.

Operating from 10 to 11 GHz, the TGA2625-CP achieves 42.5 dBm saturated output power, a power-added efficiency of > 40 %, and power gain of 28 dB.

The TGA2625-CP is packaged i

TGA2625-CP Features

* Frequency Range: 10

* 11 GHz

* Pout: 42.5 dBm (at PIN = 15 dBm)

* PAE: > 40 %

* Power Gain: 28 dB (at PIN = 15 dBm)

* Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical, pulsed (PW = 100 µs, DC = 10 %)

* Package Dimensions: 15.2 x 15.2 x 3.5 mm

* Package base is