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TGA2622-CP

35W GaN Power Amplifier

TGA2622-CP Features

* Frequency Range: 9

* 10 GHz

* PSAT: 45.5 dBm @ PIN = 18 dBm

* PAE: > 43 % @ PIN = 18 dBm

* Power Gain: 27.5 dB @ PIN = 18 dBm

* Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical, pulsed (PW = 100 µs, DC = 10 %)

* Package Dimensions: 15.2 x 1

TGA2622-CP General Description

Qorvo’s TGA2622-CP is a packaged high-power X-Band amplifier fabricated on Qorvo’s QGaN25 0.25 um GaN on SiC process. Operating from 9 to 10 GHz, the TGA2622CP achieves 35 W saturated output power, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB. The TGA2622-CP is packaged i.

TGA2622-CP Datasheet (663.26 KB)

Preview of TGA2622-CP PDF

Datasheet Details

Part number:

TGA2622-CP

Manufacturer:

Qorvo

File Size:

663.26 KB

Description:

35w gan power amplifier.

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TGA2622-CP 35W GaN Power Amplifier Qorvo

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