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SI8405DB - P-Channel MOSFET

SI8405DB Description

12 V P-Channel 1.8 V (G-S) MOSFET Si8405DB Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) () 0.055 at VGS = - 4.5 V 0.070 at VGS = - 2.5 V.

SI8405DB Features

* TrenchFET® Power MOSFET
* MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area

SI8405DB Applications

* PA, Battery and Load Switch S
* Battery Charger Switch G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 12 V VGS ±8 Continuous Drain Current (TJ

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P-Channel MOSFET Vishay Siliconix
Vishay Siliconix SI8405DB-like datasheet