WNM3011 Datasheet, Mosfet, Will Semiconductor

WNM3011 Features

• Mosfet z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications 6 54 3011

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Part number:

WNM3011

Manufacturer:

Will Semiconductor

File Size:

194.04kb

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📄 Datasheet

Description:

N-channel mosfet. The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD

WNM3011 Application

• Applications Standard Product WNM3011 is Pb-free. SOT-23-6L DDS 65 4 123 DDG Configuration (Top View) Features z Trench Technology z Supper high

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WNM3011

Will Semiconductor

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