WNM3011 - N-Channel MOSFET
The WNM3011 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WNM3011 is Pb-free.
SOT-23-6L DDS 65
WNM3011 Features
* z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications 6 54 3011 YYWW 1 23 3011 YY WW = Device Code =Year =Week Marking z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC c
