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WNM3011 Datasheet - Will Semiconductor

WNM3011 N-Channel MOSFET

The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM3011 is Pb-free. SOT-23-6L DDS 65 .

WNM3011 Features

* z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications 6 54 3011 YYWW 1 23 3011 YY WW = Device Code =Year =Week Marking z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC c

WNM3011-WillSemiconductor.pdf