WNM3062A Datasheet - Will Semiconductor

WNM3062A - 30V 18.5A Single N-Channel Power MOSFET

The WNM3062A is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Standard Product WNM3062A is in compliance with RoH

WNM3062A Features

* DFN2X2-6L D D S 6 5 4 D S 1 2 3 D D G Pin configuration (Top view)

* Trench Technology

* Supper high density cell design

* Low ON resistance

* Package DFN2X2-6L Applications

* DC/DC converters

* Power supply converters circuit

* Power Switching for portab

Datasheet Details

WNM3062A

Will Semiconductor

488.76 KB

30v 18.5a single n-channel power mosfet.

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