WNM3030 Datasheet - WillSEMI

Single N-Channel Power MOSFET

WNM3030 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance

* Extremely Low Threshold Voltage

* Small package PDFN3X3-8L-EP 8 8 Pin configuration (Top view) 8 8 8 8 8 8 Applications

* DC/DC converters

* Power supply converters circuit

* L

WNM3030 General Description

The WNM3030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3030 is Pb-free. D D8 D7 PD.

WNM3030 Datasheet (1.06 MB)

WNM3030 Datasheet Preview — Preview of WNM3030 PDF

Datasheet Details

Part number:

WNM3030

Manufacturer:

WillSEMI

File Size:

1.06 MB

Description:

Single n-channel power mosfet.
WNM3030 Single N-Channel, 30V, 13A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 5.5 @ VGS= 10V 8.5 @ VGS= 4.5V WNM3030 Http://www.sh-willsemi.com .

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WNM3030 Single N-Channel Power MOSFET WillSEMI

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WNM3030 Features

WNM3030 General Description

Datasheet Details

File Size:

Description:

WNM3030 Distributor