WNM3017

MOSFET

WillSEMI

WNM3017 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance

* Extremely Low Threshold Voltage

* Small package DFN2x2-6L Applications

* DC/DC converters

* Power supply converters circuit

* Load/Power Switching for portable device Pin configuration

WNM3017 General Description

The WNM3017 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3017 is Pb-free. WNM3017 Http.

WNM3017 Datasheet (844.37 KB)

WNM3017 Datasheet Preview — Preview of WNM3017 PDF

Datasheet Details

Part number:

WNM3017

Manufacturer:

WillSEMI

File Size:

844.37 KB

Description:

Mosfet.

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WNM3017 MOSFET WillSEMI

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WNM3017 Features

WNM3017 General Description

Datasheet Details

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Description:

WNM3017 Distributor