WNM3017 - MOSFET
The WNM3017 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM3017 is Pb-free.
WNM3017 Http
WNM3017 Features
* Trench Technology
* Supper high density cell design
* Excellent ON resistance
* Extremely Low Threshold Voltage
* Small package DFN2x2-6L Applications
* DC/DC converters
* Power supply converters circuit
* Load/Power Switching for portable device Pin configuration
