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WNM3017 Datasheet - WillSEMI

WNM3017 - MOSFET

The WNM3017 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Standard Product WNM3017 is Pb-free.

WNM3017 Http

WNM3017 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance

* Extremely Low Threshold Voltage

* Small package DFN2x2-6L Applications

* DC/DC converters

* Power supply converters circuit

* Load/Power Switching for portable device Pin configuration

WNM3017-WillSEMI.pdf

Preview of WNM3017 PDF
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Datasheet Details

Part number:

WNM3017

Manufacturer:

WillSEMI

File Size:

844.37 KB

Description:

Mosfet.

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