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WNM3025

MOSFET

WNM3025 Features

* GS

* Trench Technology

* Supper high density cell design

* Excellent ON resistance

* Extremely Low Threshold Voltage

* Small package DFN1006-3L Applications

* DC/DC converters

* Power supply converters circuit

* Load/Power Switching for portable device Pin configur

WNM3025 General Description

The WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3025 is Pb-free. DFN1006-3L D .

WNM3025 Datasheet (1.43 MB)

Preview of WNM3025 PDF

Datasheet Details

Part number:

WNM3025

Manufacturer:

WillSEMI

File Size:

1.43 MB

Description:

Mosfet.
WNM3025 Single N-Channel, 30V, 0.23A, Power MOSFET VDS (V) 30 Typical RDS(on) (Ω) 1.2 @VGS=10V 1.4 @VGS=4.5V WNM3025 Http://www.sh-willsemi.com G S.

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WNM3025 MOSFET WillSEMI

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