Datasheet Details
- Part number
- WNM3018
- Manufacturer
- WillSEMI
- File Size
- 681.97 KB
- Datasheet
- WNM3018-WillSEMI.pdf
- Description
- MOSFET
WNM3018 Description
WNM3018 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.5V ESD Rating: 2000V HBM Descri.
The WNM3018 is N-Channel enhancement MOS Field Effect Transistor.
WNM3018 Features
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* HBM ESD protection >2 kV
WNM3018 Applications
* Driver: Relay, Solenoid, Lamps,Hammers etc.
* Power supply converters circuit
* Load/Power Switching for potable device
18 = Device Code
* = Month (A~Z)
Marking
Order information
Device WMN3018-3/TR
Package
Shipping
SOT-323 3000/Reel&Tape
Will Semiconductor Ltd. 1 2015/8/10
📁 Related Datasheet
📌 All Tags