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WNM3018 - MOSFET

WNM3018 Description

WNM3018 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.5V ESD Rating: 2000V HBM Descri.
The WNM3018 is N-Channel enhancement MOS Field Effect Transistor.

WNM3018 Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* HBM ESD protection >2 kV

WNM3018 Applications

* Driver: Relay, Solenoid, Lamps,Hammers etc.
* Power supply converters circuit
* Load/Power Switching for potable device 18 = Device Code
* = Month (A~Z) Marking Order information Device WMN3018-3/TR Package Shipping SOT-323 3000/Reel&Tape Will Semiconductor Ltd. 1 2015/8/10

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Datasheet Details

Part number
WNM3018
Manufacturer
WillSEMI
File Size
681.97 KB
Datasheet
WNM3018-WillSEMI.pdf
Description
MOSFET

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MOSFET WillSEMI
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