WNMD2162 Datasheet (Will Semiconductor)

WNMD2162 - Dual N-Channel MOSFET

Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@ VGS=2.5V The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and

WNMD2162 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package PDFN2.9×2.8-8L Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch