WNMD2162 Datasheet - Will Semiconductor

WNMD2162 Dual N-Channel MOSFET

Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@ VGS=2.5V The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and .

WNMD2162 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package PDFN2.9×2.8-8L Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

WNMD2162-WillSemiconductor.pdf

WNMD2162 Datasheet Preview — Preview of WNMD2162 PDF

Datasheet Details

Part number:

WNMD2162

Manufacturer:

Will Semiconductor

File Size:

1.21 MB

Description:

Dual n-channel mosfet.

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WNMD2162 WNMD2162 Dual N-Channel MOSFET Will Semiconductor

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