WNMD2166 Dual N-Channel MOSFET

Will Semiconductor

Description

WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2.5V ID (A) 4.0 2.5 2.0 WNMD21.
The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor.

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Datasheet Specifications

Part number: WNMD2166
Manufacturer: Will Semiconductor
File Size: 729.12 KB
Datasheet: WNMD2166-WillSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging Package G1 D1/D2 65 G2 4 1 23 S1 D1/D2 S2 Pin configuration (Top view) 6 54 2166 YYWW 1 23 2166 = Device Code YY = Year WW = Week Marking Order information Device

WNMD2166 Distributors

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WNMD2166 Dual N-Channel MOSFET Will Semiconductor

Will Semiconductor WNMD2166-like datasheet