WNMD2167

Dual N-Channel MOSFET

Will Semiconductor

WNMD2167 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package SOT-23-6L Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

WNMD2167 General Description

The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2167 is Pb-free. WNMD2167 H.

WNMD2167 Datasheet (617.65 KB)

WNMD2167 Datasheet Preview — Preview of WNMD2167 PDF

Datasheet Details

Part number:

WNMD2167

Manufacturer:

Will Semiconductor

File Size:

617.65 KB

Description:

Dual n-channel mosfet.

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WNMD2167 Dual N-Channel MOSFET Will Semiconductor

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WNMD2167 Features

WNMD2167 General Description

Datasheet Details

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Description:

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