Description
Rds(on) (Ω) 0.014@ VGS=4.5V 0.015@ VGS=3.1V 0.016@ VGS=2.5V
The WNMD2162A is Dual N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.This device is suitable for use in DC-DC conversion, power switch and charging circuit.Standard Product WNMD2162A is Pb-free and Halogen-free.
Features
- Trench Technology.
- Supper high density cell design.
- Excellent ON resistance for higher DC current.
- Extremely Low Threshold Voltage.
- Small package PDFN2.9×2.8-8L
WNMD2162A
Http://www. sh-willsemi. com
PDFN2.9×2.8-8L
D2 D2 D1 D1 8 7 65
1 23 4 S2 G2 S1 G1
Pin configuration (Top view)
8 765
2162A YYWW
1 2 34
2162A = Device Code YY = Year WW = Week.
WNMD2162A-WillSemiconductor.pdf
