WNMD2162A Datasheet - Will Semiconductor

WNMD2162A Dual N-Channel MOSFET

Rds(on) (Ω) 0.014@ VGS=4.5V 0.015@ VGS=3.1V 0.016@ VGS=2.5V The WNMD2162A is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and.

WNMD2162A Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package PDFN2.9×2.8-8L WNMD2162A Http://www.sh-willsemi.com PDFN2.9×2.8-8L D2 D2 D1 D1 8 7 65 1 23 4 S2 G2 S1 G1 Pin configuration (Top

WNMD2162A-WillSemiconductor.pdf