WNMD2168 Datasheet - Will Semiconductor

WNMD2168 Dual N-Channel MOSFET

The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2168 is Pb-free. WNMD2168 H.

WNMD2168 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package TSSOP-8L 1234 D1/D2 S1 S1 G1 Pin configuration (Top view) 8765 2168 YYWW Applications

* Driver for Relay, Solenoid, Motor,

WNMD2168-WillSemiconductor.pdf