WNMD2168 Datasheet (Will Semiconductor)

WNMD2168, Dual N-Channel MOSFET

The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Standard Product WNMD2168 is Pb-free.

WNMD2168 H

WNMD2168 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package TSSOP-8L 1234 D1/D2 S1 S1 G1 Pin configuration (Top view) 8765 2168 YYWW Applications

* Driver for Relay, Solenoid, Motor,