WNMD2168 Dual N-Channel MOSFET

Will Semiconductor

Description

WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.022@ VGS=4.5V 0.024@ VGS=3.1V 0.027@ VGS=2.5V .
The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor.

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Datasheet Specifications

Part number: WNMD2168
Manufacturer: Will Semiconductor
File Size: 803.22 KB
Datasheet: WNMD2168-WillSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging Will Semiconductor Ltd. 1234 2168 YY WW =Logo =Device Code = Year = Week Marking Order information Device Package Shippin

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WNMD2168 Dual N-Channel MOSFET Will Semiconductor

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