WNMD2165 Dual N-Channel MOSFET

Will Semiconductor

Description

WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM .
The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor.

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Datasheet Specifications

Part number: WNMD2165
Manufacturer: Will Semiconductor
File Size: 1.70 MB
Datasheet: WNMD2165-WillSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Pin configuration (Top view)
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging 6 54 65
* 1 23 65 = Device Code
* = Month (A~Z) Marking Order information Device Package Shipping WNMD2165-6/TR SOT-363 30

WNMD2165 Distributors

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WNMD2165 Dual N-Channel MOSFET Will Semiconductor

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