WNMD3014 Datasheet - Will Semiconductor

WNMD3014 Dual N-Channel MOSFET

The WNMD3014 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD3014 is Pb-free and Halogen-.

WNMD3014 Features

* SOP-8L D1 D1 D2 D2 8 76 5 1 234 S1 G1 S2 G2 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Sw

WNMD3014 Datasheet (113.97 KB)