WNMD6003 Datasheet - Will Semiconductor

WNMD6003 Dual N-Channel MOSFET

The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD6003 is Pb-free and .

WNMD6003 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package SOT-563 Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

* Lo

WNMD6003-WillSemiconductor.pdf

WNMD6003 Datasheet Preview — Preview of WNMD6003 PDF

Datasheet Details

Part number:

WNMD6003

Manufacturer:

Will Semiconductor

File Size:

1.50 MB

Description:

Dual n-channel mosfet.

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