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WNMD6003 Dual N-Channel MOSFET

WNMD6003 Description

WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM .
The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor.

WNMD6003 Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

WNMD6003 Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging Pin configuration (Top view) 6 54 60
* 1 23 60 = Device Code
* = Month (A~Z) Marking Order information Device Package Shipping WNMD6003-6/TR SOT-563 300

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Datasheet Details

Part number
WNMD6003
Manufacturer
Will Semiconductor
File Size
1.50 MB
Datasheet
WNMD6003-WillSemiconductor.pdf
Description
Dual N-Channel MOSFET

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