WNM6002 Datasheet - WillSEMI

WNM6002 MOSFET

The WNM6002 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM6002 is Pb-free and Halogen-f.

WNM6002 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package SOT-323 Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

* Lo

WNM6002 Datasheet (1.40 MB)

WNM6002 Datasheet Preview — Preview of WNM6002 PDF

Datasheet Details

Part number:

WNM6002

Manufacturer:

WillSEMI

File Size:

1.40 MB

Description:

Mosfet.

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