WNM6001
Will Semiconductor
1.28MB
N-channel mosfet. The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R
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📁 Related Datasheet
WNM6002 - MOSFET
(WillSEMI)
WNM6002
Single N-Channel, 60V, 0.30A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V 60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNM6.
WNM01N10 - MOSFET
(WillSEMI)
WNM01N10
Single N-Channel, 100V, 1.7A, Power MOSFET
VDS (V) 100
Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V
Descriptions
The WNM01N10 is N-.
WNM01N11 - MOSFET
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WNM01N11
Single N-Channel, 110V, 1.8A, Power MOSFET
VDS (V) 110
Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V
WNM01N11
Http://.sh-willsemi.
WNM05N60 - MOSFET
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WNM05N60F - MOSFET
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WNM07N60 - N-Channel MOSFET
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WNM07N60/WNM07N60F 600V N-Channel MOSFET
Description
The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v.
WNM07N60F - N-Channel MOSFET
(Will Semiconductor)
WNM07N60/WNM07N60F 600V N-Channel MOSFET
Description
The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v.
WNM07N65 - N-Channel MOSFET
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WNM07N65/WNM07N65F 650V N-Channel MOSFET
Description
The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v.
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(Will Semiconductor)
WNM07N65/WNM07N65F 650V N-Channel MOSFET
Description
The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v.
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(Will Semiconductor)
WNM12N65/WNM12N65F 650V N-Channel MOSFET
Description
The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v.