WNM6001 Datasheet (Will Semiconductor)

WNM6001, N-Channel MOSFET

The WNM6001 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Standard Product WNM6001 is Pb-free and Halogen-f

WNM6001 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package SOT-23 Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

* Loa