WNM6001 N-Channel MOSFET

Will Semiconductor

Description

WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM .
The WNM6001 is N-Channel enhancement MOS Field Effect Transistor.

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Datasheet Specifications

Part number: WNM6001
Manufacturer: Will Semiconductor
File Size: 1.28 MB
Datasheet: WNM6001-WillSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging Pin configuration (Top view) 3 W61
* 12 W61 = Device Code
* = Month (A~Z) Marking Order information Device Package Shipping WNM6001-3/TR SOT-23 3000/Reel&T

WNM6001 Distributors

📁 Related Datasheet

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WNM6001 N-Channel MOSFET Will Semiconductor

Will Semiconductor WNM6001-like datasheet