WNM6001

N-Channel MOSFET

Will Semiconductor

WNM6001 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package SOT-23 Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

* Loa

WNM6001 General Description

The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM6001 is Pb-free and Halogen-f.

WNM6001 Datasheet (1.28 MB)

WNM6001 Datasheet Preview — Preview of WNM6001 PDF

Datasheet Details

Part number:

WNM6001

Manufacturer:

Will Semiconductor

File Size:

1.28 MB

Description:

N-channel mosfet.

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WNM6001 N-Channel MOSFET Will Semiconductor

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WNM6001 Features

WNM6001 General Description

Datasheet Details

File Size:

Description:

WNM6001 Distributor