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NX3008NBKS dual N-channel MOSFET

NX3008NBKS Description

NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET 5 November 2022 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench.

NX3008NBKS Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV

NX3008NBKS Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain curren

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