Datasheet Details
- Part number
- NX3008PBKW
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 319.74 KB
- Datasheet
- NX3008PBKW-NXPSemiconductors.pdf
- Description
- MOSFET
NX3008PBKW Description
SO T3 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev.1 * 1 August 2011 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET te.
NX3008PBKW Features
* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV
NX3008PBKW Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 2
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