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NX3008PBKV MOSFET

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Description

SO T6 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev.1 * 29 July 2011 Product data sheet 1.Product profile 1.1 General descripti.
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package usin.

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Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C [1] Conditions Tj = 25 °C

NX3008PBKV Distributors

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NX3008PBKV MOSFET NXP Semiconductors
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NX3008NBKS
NX3008NBKT