NX3008PBKMB P-channel MOSFET

nexperia

Description

NX3008PBKMB 30 V, single P-channel Trench MOSFET Rev.1 * 11 May 2012 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: NX3008PBKMB
Manufacturer: nexperia ↗
File Size: 1.59 MB
Datasheet: NX3008PBKMB-nexperia.pdf
Description: P-channel MOSFET

Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state res

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NX3008PBKMB P-channel MOSFET nexperia

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