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NX3008NBKMB - N-channel MOSFET

NX3008NBKMB Description

NX3008NBKMB 30 V, single N-channel Trench MOSFET 5 November 2022 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

NX3008NBKMB Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV

NX3008NBKMB Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V;

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