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NX3008PBK P-channel MOSFET

NX3008PBK Description

NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev.1 * 1 August 2011 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

NX3008PBK Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV

NX3008PBK Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics Tj

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