NX3008PBKV dual P-channel MOSFET

nexperia

Description

NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev.1 * 29 July 2011 Product data sheet 1.Product profile 1.1 General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package usin.

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Datasheet Specifications

Part number: NX3008PBKV
Manufacturer: nexperia ↗
File Size: 1.57 MB
Datasheet: NX3008PBKV-nexperia.pdf
Description: dual P-channel MOSFET

Features

* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain curren

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NX3008PBKV dual P-channel MOSFET nexperia

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