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PE2300 - N-Channel Enhancement Mode Power MOSFET

PE2300 Description

PE2300 N-Channel Enhancement Mode Power MOSFET .
The PE2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PE2300 Features

* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

Preview of PE2300 PDF
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Datasheet Details

Part number
PE2300
Manufacturer
semi one
File Size
189.20 KB
Datasheet
PE2300-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PE2300-like datasheet