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MRF557 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

the UHF frequency range.

Key Features

  • Specified @ 12.5 V, 870 MHz Characteristics.
  • Output Power = 1.5 W.
  • Minimum Gain = 8 dB.
  • Efficiency 60% (Typ).
  • Cost Effective PowerMacro Package.
  • Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G.
  • G Denotes RoHS Compliant, Pb Free Terminal Finish Power Macro.

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Datasheet Details

Part number MRF557
Manufacturer Advanced Power Technology
File Size 146.05 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet MRF557 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G * G Denotes RoHS Compliant, Pb Free Terminal Finish Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.