MRF557G

Manufacturer: Advanced Power Technology

MRF557G datasheet by Advanced Power Technology.

This datasheet includes multiple variants, all published together in a single manufacturer document.

MRF557G Datasheet Details

Part number	MRF557G
Datasheet	MRF557G MRF557 Datasheet (PDF)
File Size	146.05 KB
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF557G Overview

Designed primarily for wideband large signal stages in the UHF frequency range. RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75°C Derate above 75°C 3.0 Watts 40 mW/ °C Advanced Power Technology reserves the right to change,...

MRF557G Key Features

Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 8 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
G Denotes RoHS pliant, Pb Free Terminal Finish

More Datasheets from Advanced Power Technology

View all Advanced Power Technology datasheets

Part Number	Description
MRF557	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF517	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581	RF and Microwave Discrete Low Power Power Transistors
MRF5812	Bipolar Junction Transistor
MRF5812G	Bipolar Junction Transistor
MRF581A	RF and Microwave Discrete Low Power Power Transistors

MRF557G Datasheet Details

MRF557G Overview

MRF557G Key Features

More Datasheets from Advanced Power Technology

MRF557G Distributor