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MRF557G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Download the MRF557G datasheet PDF. This datasheet also covers the MRF557 variant, as both devices belong to the same rf & microwave discrete low power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

the UHF frequency range.

Key Features

  • Specified @ 12.5 V, 870 MHz Characteristics.
  • Output Power = 1.5 W.
  • Minimum Gain = 8 dB.
  • Efficiency 60% (Typ).
  • Cost Effective PowerMacro Package.
  • Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G.
  • G Denotes RoHS Compliant, Pb Free Terminal Finish Power Macro.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF557-AdvancedPowerTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRF557G
Manufacturer Advanced Power Technology
File Size 146.05 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet MRF557G Datasheet

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Other Datasheets by Advanced Power Technology

Part Number Description
MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G * G Denotes RoHS Compliant, Pb Free Terminal Finish Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.