• Part: MRF557G
  • Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • Category: Transistor
  • Manufacturer: Advanced Power Technology
  • Size: 146.05 KB
Download MRF557G Datasheet PDF
Advanced Power Technology
MRF557G
Features - Specified @ 12.5 V, 870 MHz Characteristics - Output Power = 1.5 W - Minimum Gain = 8 d B - Efficiency 60% (Typ) - Cost Effective Power Macro Package - Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G - G Denotes Ro HS pliant, Pb Free Terminal Finish Power Macro DESCRIPTION : Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.0 500 Unit Vdc Vdc Vdc m A Thermal Data Total Device Dissipation @ TC = 75°C Derate above 75°C 3.0 Watts 40 m W/ °C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website...