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SI2399DS - P-Channel MOSFET

Description

The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS.

The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 5 V gate drive.

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Datasheet Details

Part number SI2399DS
Manufacturer Vishay
File Size 126.25 KB
Description P-Channel MOSFET
Datasheet download datasheet SI2399DS Datasheet

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www.DataSheet.co.kr SPICE Device Model Si2399DS Vishay Siliconix P-Channel 20 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 5 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
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