-80V Datasheet | Specifications & PDF Download

® TDA7295 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 80W MUSI

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RJK0822SPN-VB RJK0822SPN-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V

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FDB0250N807L N-Channel PowerTrench® MOSFET March 2016 FDB0250N807L N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.2 mΩ Features „ Max rDS(on) = 2.2 m

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FDB0165N807L N-Channel PowerTrench® MOSFET December 2015 FDB0165N807L N-Channel PowerTrench® MOSFET 80 V, 310 A, 1.6 mΩ Features General Descripti

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FDD86380-F085 N-Channel PowerTrench® MOSFET FDD86380-F085 N-Channel PowerTrench® MOSFET 80 V, 50 A, 13.5 mΩ Features „ Typical RDS(on) = 11.2 mΩ at

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FDB0190N807L N-Channel PowerTrench® MOSFET March 2016 FDB0190N807L N-Channel PowerTrench® MOSFET 80 V, 270 A, 1.7 mΩ Features „ Max rDS(on) = 1.7 m

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FDD86381-F085 N-Channel PowerTrench® MOSFET FDD86381-F085 N-Channel PowerTrench® MOSFET 80 V, 25 A, 21 mΩ Features „ Typical RDS(on) = 16.2 mΩ at VG

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MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367-F085 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 6

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 80 V, 64 A, 6.8 mW FDMC007N08LCDC General Description This N-Channel MV MOSFET is produced using onse

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MOSFET – N-Channel, POWERTRENCH) 80 V, 240 A, 2.0 mW FDBL86363-F085 Features  Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A  Typical Qg(tot) =

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IPA040N08NM5S MOSFET OptiMOSTM 5 Power-Transistor, 80 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on

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MOSFET – POWERTRENCH) N-Channel 80 V, 220 A, 3.0 mW FDBL86366-F085 Features • Typical RDS(on) = 2.4 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) =

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FD2103 FD2103 FD2103 ， 、 N MOSFET， +180V 。 FD2103 （UVLO）， ，。 FD2103 ， ，。 180V  +180V  +1.0A/-1.0A  3.3V/5V  VCC（UVLO）     100ns DC

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Datasheet 0.8A 150KHz 100V Buck DC to DC Converter XL7015 Features  Maximum Input Voltage 100V  Output Adjustable from 1.25V to 20V  Maximum Dut

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W25X10, W25X20, W25X40, W25X80 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: J

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MOSFET – N-Channel, POWERTRENCH) 80 V, 300 A, 1.4 mW FDBL86361-F085 Features  Typical RDS(on) = 1.1 mW at VGS = 10 V, ID = 80 A  Typical Qg(tot) =

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FQB9N08L / FQI9N08L June 2000 QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field e

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FQP17N08L December 2000 QFET FQP17N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistor

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FQP90N08 January 2001 QFET FQP90N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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( DataSheet : www.DataSheet4U.com ) NTF3N08, NTF3N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology proces

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