100N10 Datasheet | Specifications & PDF Download

RSD100N10FRA 　　 Nch 100V 10A Power MOSFET 　　 Datasheet lOutline VDSS 100V TO-252 　 RDS(on)(Max.) 133mΩ SC-63 ID ±10A CPT3 PD 20W 　 　　　

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STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK,

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NDPL100N10B Power MOSFET 100V, 7.2mΩ, 100A, N-Channel www.onsemi.com Features • Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Av

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V

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CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTB100N10RKJ3 Spec. No. : C059J3 Issued Date : 2016.09.01 Revised Date : Page No.

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100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switching speed • Low gat

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CYStech Electronics Corp. Spec. No. : C059H8 Issued Date : 2017.04.25 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE100

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10

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IAUC100N10S5L054 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Leve

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NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package Features • Source−to−Drain Diode Recovery Time Comparab

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PFP100N10S / PFB100N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara

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PFP100N10S / PFB100N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara

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NDPL100N10B Power MOSFET 100V, 7.2mΩ, 100A, N-Channel www.onsemi.com Features • Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Av

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SAMWIN SW100N10 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 11mΩ)@VGS=10V ■ Gate Charge (Typical 109nC) ■ Improved d

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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BRB100N10 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS 。N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,。 Low gate charge

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STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK,

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MCAC100N10YHE3 Features • AEC-Q101 Qualified • Excellent Package for Heat Dissipation • High Density Cell Design for Low RDS(ON) • Halogen Free. “Gre

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñç

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ECMF2-40A100N6, ECMF4-40A100N10 Datasheet Common mode filter with ESD protection for high speed serial interface Features D+ to connector 1 D- to co

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