100N10 Datasheet | Specifications & PDF Download

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V

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RSD100N10FRA 　　 Nch 100V 10A Power MOSFET 　　 Datasheet lOutline VDSS 100V TO-252 　 RDS(on)(Max.) 133mΩ SC-63 ID ±10A CPT3 PD 20W 　 　　　

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñç

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñç

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñç

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IAUC100N10S5L054 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Leve

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ECMF2-40A100N6, ECMF4-40A100N10 Datasheet Common mode filter with ESD protection for high speed serial interface Features D+ to connector 1 D- to co

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() CRSE100N10L2X SkyMOS2 N-MOSFET 100, 7mΩ, 13A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excellen

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Description AP100N10NF 100V N-Channel Enhancement Mode MOSFET The AP100N10NF uses advanced APM-SGT II technology to provide excellent RDS(ON), low g

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NDPL100N10B Power MOSFET 100V, 7.2mΩ, 100A, N-Channel www.onsemi.com Features • Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Av

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OptiMOS™2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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OptiMOSTM-5 Power-Transistor Features • N-channel - Enhancement mode - Normal level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche te

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100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switching speed • Low gat

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BRB100N10 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS 。N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,。 Low gate charge

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OptiMOSTM-5 Power-Transistor Features • N-channel - Enhancement mode - Logic level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tes

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SAMWIN SW100N10 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 11mΩ)@VGS=10V ■ Gate Charge (Typical 109nC) ■ Improved d

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                        ADV     ADM100N10  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 100A RDS(ON) (mΩ) 13m

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STD100N10LF7AG Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Features Or

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