100N10 Datasheet | Specifications & PDF Download

100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switching speed • Low gat

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STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Featur

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NDPL100N10B Power MOSFET 100V, 7.2mΩ, 100A, N-Channel www.onsemi.com Features • Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Av

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Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSL100N10MS 100V

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STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK,

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NDPL100N10B Power MOSFET 100V, 7.2mΩ, 100A, N-Channel www.onsemi.com Features • Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Av

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STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK,

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RSD100N10FRA 　　 Nch 100V 10A Power MOSFET 　　 Datasheet lOutline VDSS 100V TO-252 　 RDS(on)(Max.) 133mΩ SC-63 ID ±10A CPT3 PD 20W 　 　　　

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V I DSS D25 100 V 100 A 100 V 15

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CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTB100N10RKJ3 Spec. No. : C059J3 Issued Date : 2016.09.01 Revised Date : Page No.

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-L

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STD100N10LF7AG Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Features Or

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SAMWIN SW100N10 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 11mΩ)@VGS=10V ■ Gate Charge (Typical 109nC) ■ Improved d

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SAMWIN SW100N10B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved d

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OptiMOS™2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñç

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STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Featur

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Isc N-Channel MOSFET Transistor ·FEATURES ·Very low on-resistance ·Very low gate charge ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu

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