11-INCH Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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isc N-Channel MOSFET Transistor IRFB4115，IIRFB4115 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Spe

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltag

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isc Thyristors INCHANGE Semiconductor TIC116series DESCRIPTION ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to

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1100 2.5-Inch and M.2 NAND Flash SSD Features 1100 2.5-Inch and M.2 SATA NAND Flash SSD MTFDDAK256TBN, MTFDDAK512TBN, MTFDDAK1T0TBN, MTFDDAK2T0TBN, MT

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD111 DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·Hi

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

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Silicon NPN Power Transistor MJ21194 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Sa

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·

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isc Thyristors TIC116D APPLICATIONS ·8A contimunous on-state current ·80A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·M

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Preliminary‡ 1/4-INCH VGA CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 1/4-INCH VGA CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR Features • • • • • • DigitalCla

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MT9V011: 1/4-Inch VGA Digital Image Sensor Features www.DataSheet4U.com 1/4-Inch VGA Digital Image Sensor MT9V011 For the latest data sheet revision,

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D

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sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdo

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Comple

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