11-INCH Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFB4115，IIRFB4115 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Spe

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltag

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for

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sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdo

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear

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isc Thyristors TIC116D APPLICATIONS ·8A contimunous on-state current ·80A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·M

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·C

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isc Thyristors INCHANGE Semiconductor TIC116series DESCRIPTION ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to

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isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4110，IIRFP4110 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.5mΩ ·Enhancement m

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isc N-Channel Mosfet Transistor BUZ11 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High in

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58.34mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY Part Number: TC23-11GWA Green Features z 2.3 inch matrix height. z Dot size 5mm. z Low current operation.

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D

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58mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY Part Number: TC23-11EWA High Efficiency Red Features z 2.3 INCH MATRIX HEIGHT. z DOT SIZE 5mm. z LOW CURRENT

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isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Minimum Lot-t

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isc N-Channel MOSFET Transistor TK11P65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.44Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V,

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