11-INCH Datasheet | Specifications & PDF Download

isc Thyristors TIC116D APPLICATIONS ·8A contimunous on-state current ·80A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·M

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage

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isc N-Channel MOSFET Transistor IRFB4115，IIRFB4115 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Spe

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58.34mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY Part Number: TC23-11GWA Green Features z 2.3 inch matrix height. z Dot size 5mm. z Low current operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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58mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY Part Number: TC23-11SRWA Super Bright Red Features z 2.3 INCH MATRIX HEIGHT. z DOT SIZE 5mm. z LOW CURRENT O

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.55V(Max)@IC= -3A ·High fT ·Good Linearity of hFE ·Fast

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance :

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Features z 0.3 inch digit height. z Excellent character appearance. z Easy mounting on P.C. boards or sockets. z Mechanically rugged. z Standard : gra

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INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 DESCRIPTION ·Collector-Emit

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1113 DESCRIPTION ·High Current Capacity ·Wide area of safe operation ·Minimum Lot-to-Lot

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N80C3 ISPW11N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤450mΩ ·Enhanceme

Rating: 1 ★ (8 votes)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhanceme

Rating: 1 ★ (8 votes)

isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche

Rating: 1 ★ (8 votes)

isc N-Channel MOSFET Transistor AOB11S65 FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanch

Rating: 1 ★ (8 votes)

isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

Rating: 1 ★ (7 votes)

58mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY Part Number: TC23-11EWA High Efficiency Red Features z 2.3 INCH MATRIX HEIGHT. z DOT SIZE 5mm. z LOW CURRENT

Rating: 1 ★ (7 votes)

isc Silicon NPN Power Transistors D44C11 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C1

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot

Rating: 1 ★ (7 votes)