STMicroelectronics
M27W101 - 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W101
1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V –
Rating:
1
★
(5 votes)
Samsung semiconductor
K4R271669E - 128Mbit RDRAM(E-die)
K4R271669E
Direct RDRAM™
128Mbit RDRAM(E-die)
256K x 16 bit x 32s Banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.4 July 2002
K4R2
Rating:
1
★
(5 votes)
Mosel Vitelic Corp
V54C3128404VT - 128Mbit SDRAM
MOSEL VITELIC
V54C3128(16/80/40)4V(T/S) 128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
PRELIMINARY
6 System Frequency (fCK
Rating:
1
★
(5 votes)
ST Microelectronics
M48T128Y - 1-Mbit SRAM
M48T128Y
5.0 V, 1 Mbit (128 Kb x 8) TIMEKEEPER® SRAM
Not recommended for new design
Features
■ Integrated, ultra low power SRAM, real-time
clock,
Rating:
1
★
(5 votes)
ST Microelectronics
M48Z128V - 5.0V OR 3.3V / 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM
M48Z128 M48Z128Y, M48Z128V*
5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
FEATURES SUMMARY s INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTRO
Rating:
1
★
(5 votes)
ST Microelectronics
M48Z128Y - 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM
M48Z128 M48Z128Y
5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
Not recommended for new design
Features
■ Integrated, ultra low power SRAM, power-fai
Rating:
1
★
(5 votes)
STMicroelectronics
29F010 - 1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory
M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPER
Rating:
1
★
(5 votes)
STMicroelectronics
29F200 - 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM
Rating:
1
★
(5 votes)
Hynix Semiconductor
HY27US08281A - (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US(08/16)281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Document Title
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory Revision History
Rev
Rating:
1
★
(5 votes)
Hynix Semiconductor
H55S1222EFP-60E - 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
www.DataSheet4U.com
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of 128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organiz
Rating:
1
★
(5 votes)
Hynix Semiconductor
H55S1222EFP-75M - 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
www.DataSheet4U.com
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of 128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organiz
Rating:
1
★
(5 votes)
Hynix Semiconductor
H55S1262EFP-75E - 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
www.DataSheet4U.com
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
Specification of 128M (8Mx16bit) Mobile SDRAM
Memory Cell Array
- Organiz
Rating:
1
★
(5 votes)
Hynix Semiconductor
H55S1262EFP-60M - 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
www.DataSheet4U.com
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
Specification of 128M (8Mx16bit) Mobile SDRAM
Memory Cell Array
- Organiz
Rating:
1
★
(5 votes)
STMicroelectronics
M27C202 - 2 Mbit 128Kb x16 UV EPROM and OTP EPROM
M27C202
2 Mbit (128Kb x16) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Curre
Rating:
1
★
(4 votes)
Intel
28F001BN-B - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B
Y High-Integration Blocked Architecture One 8 KB Boot Block w L
Rating:
1
★
(4 votes)
Intel
28F001BN-T - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B
Y High-Integration Blocked Architecture One 8 KB Boot Block w L
Rating:
1
★
(4 votes)
Samsung semiconductor
K4S281632C-TL1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Mar. 2000
* Samsung Electronics reserves the right to
Rating:
1
★
(4 votes)
Samsung semiconductor
K4S281632D-L1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Rev. 0.1 Sept. 2001
* Samsung Electronics reserves the right to ch
Rating:
1
★
(4 votes)
Samsung semiconductor
K4S281632D-L55 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Rev. 0.1 Sept. 2001
* Samsung Electronics reserves the right to ch
Rating:
1
★
(4 votes)
Samsung semiconductor
K4S281632D-NC1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Rev. 0.1 Sept. 2001
* Samsung Electronics reserves the right to ch
Rating:
1
★
(4 votes)