15N10 Datasheet | Specifications & PDF Download

N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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UNISONIC TECHNOLOGIES CO., LTD 15N10 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses

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B15N10D/F N-Channel 100-V (D-S) MOSFET General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to prov

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TLC5930 SLLS528 – MARCH 2002 12-CHANNEL LED DRIVER FEATURES D 0.2-mA to 40-mA (Constant-Current Sink) D D Drive Capability x 12 Bits Output Count in

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MOSFET - Power, Single N-Channel 100 V, 12.2 mW, 47.1 A NVMFS015N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimi

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IPT015N10N5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

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FQD15N10 100V N-Channel MOSFET General Description Product Summary The FQP15N10 & FQPF15N10 uses trench MOSFET technology that is uniquely optimize

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STP315N10F7 Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features

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B15N10D/F N-Channel 100-V (D-S) MOSFET General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to prov

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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee DataSheet4U.com DataShe

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STL115N10F7AG Automotive-grade N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data

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Elektronische Bauelemente SSD15N10-C 15A, 100V, RDS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h

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ME15N10-VB ME15N10-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS(

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5

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OSD15N10 http://www.osen.net.cn 100V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche e

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100V N-Channel Enhancement Mode MOSFET BM15N10 DESCRIPTION The 15N10 is N channel enhancement mode power effect transitor which is produced using hi

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