15N10 Datasheet | Specifications & PDF Download

N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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UNISONIC TECHNOLOGIES CO., LTD UTT15N10 15A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC UTT15N10 uses UTC’s advanced proprietary, planar s

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B15N10D/F N-Channel 100-V (D-S) MOSFET General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to prov

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UNISONIC TECHNOLOGIES CO., LTD UT15N10 15A, 100V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UT15N10 is a N-channel mode power MOSFET

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www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sh

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS(

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT15N100Q3 IXFH15N100Q3 D G S Symbol VDSS VDG

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UNISONIC TECHNOLOGIES CO., LTD 15N10 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses

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YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5

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Public IPT015N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑Channel

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V

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IGBT Lightspeed Series IXGA 15N100C IXGP 15N100C VCES IC25 VCE(sat) tfi(typ) =1000 V = 30 A = 3.5 V = 115 ns Symbol www.DataSheet4U.com V CES Tes

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT15N100Q3 IXFH15N100Q3 D G S Symbol VDSS VDG

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TLC5930 SLLS528 – MARCH 2002 12-CHANNEL LED DRIVER FEATURES D 0.2-mA to 40-mA (Constant-Current Sink) D D Drive Capability x 12 Bits Output Count in

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GOFORD GT15N10 Description · Trench Power MV MOSFET technology · Low RDS(ON) · Low Gate Charge · Optimized for fast-switching applications General

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Description AP15N10BD 100V N-Channel Enhancement Mode MOSFET The AP15N10BD uses advanced trench technology to provide excellent RDS(ON), low gate ch

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B15N10D/F N-Channel 100-V (D-S) MOSFET General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to prov

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tm TE CH T15N1024A SRAM FEATURES • Low-power consumption - Active: 40mA at 55ns (Max.) - CMOS Stand-by: 10uA (Max.) • 55/70/100 ns access time • Eq

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet4U.com et4U.com D

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