15N10 Datasheet | Specifications & PDF Download

N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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B15N10D/F N-Channel 100-V (D-S) MOSFET General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to prov

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UNISONIC TECHNOLOGIES CO., LTD 15N10 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses

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OSD15N10 http://www.osen.net.cn 100V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche e

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HYG015N10NS1TA Feature  100V/380A RDS(ON)=1.2 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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IGBT Lightspeed Series IXGA 15N100C IXGP 15N100C VCES IC25 VCE(sat) tfi(typ) =1000 V = 30 A = 3.5 V = 115 ns Symbol VCES VCGR VGES VGEM IC25 IC90

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Public IPT015N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑Channel

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CYStech Electronics Corp. Spec. No. : C053I3 Issued Date : 2016.10.13 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB015N

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FQD15N10 100V N-Channel MOSFET General Description Product Summary The FQP15N10 & FQPF15N10 uses trench MOSFET technology that is uniquely optimize

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IPTC015N10NM5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Optimized for motor drives and battery powered applications • Optimized for top s

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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MOSFET - Power, Single N-Channel 100 V, 12.2 mW, 47.1 A NVMFS015N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimi

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB015N10RQ8 Spec. No. : C053Q8 Issued Date : 2016.11.02 Revised Date : Page No. :

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IGBT Lightspeed Series IXGA 15N100C IXGP 15N100C VCES IC25 VCE(sat) tfi(typ) =1000 V = 30 A = 3.5 V = 115 ns Symbol www.DataSheet4U.com V CES Tes

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TLC5930 SLLS528 – MARCH 2002 12-CHANNEL LED DRIVER FEATURES D 0.2-mA to 40-mA (Constant-Current Sink) D D Drive Capability x 12 Bits Output Count in

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CYStech Electronics Corp. Spec. No. : C168H8 Issued Date : 2016.06.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE015N

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MCU15N10A Features • Trench Power MV MOSFET Technology • Excellent Package for Heat Dissipation • High Density Cell Design for Low RDS(on) • Epoxy Me

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