18N20 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·1

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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B18N20D/F N-Channel 200-V (D-S) MOSFET General Description B18N20D/F combines advanced trench MOSFET technology with a low resistance package to prov

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TSF18N20M TSF18N20M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

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Advanced Power Electronics Corp. AP18N20GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-res

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MOSFET – N-Channel, UniFETt, FRFET) 200 V, 18 A, 140 mW FDPF18N20FT, FDP18N20F Description UniFET MOSFET is onsemi’s high voltage MOSFET family based

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Advanced Power Electronics Corp. AP18N20GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requir

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AP18N20GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics

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FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET FDPF18N20FT-G N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 m � Features • RDS(on) = 129 mΩ (Typ

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AGM18N20D ● General Description The AGM18N20D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP18N20

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FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability TMA18N20H，TMP18N20H Wuxi Unigroup Microelectronics Company 200V N-Chann

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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www.DataSheet4U.com CMT18N20 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switch

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www.DataSheet4U.com STB18N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B18N20 V DSS 200 V R DS(on) < 0.18 Ω ID 18 A

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FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET FDP18N20F / FDPF18N20FT N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 mΩ November 201

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Silicon N-Channel Power MOSFET ○R CS18N20 A8R General Description： CS18N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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Silicon N-Channel Power MOSFET ○R CS18N20 A4R General Description： CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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GSMD18N20 200V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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