19N10 Datasheet | Specifications & PDF Download

() CRSZ019N10N4Q SkyMOS4 N-MOSFET 100V, 1.5mΩ, 310A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exce

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() CRSZ019N10N4Z SkyMOS4 N-MOSFET 100V, 1.75mΩ, 248A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exc

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 MT19N10E  1 &KDQQHO93RZHU02 6)(7 )HDWXUHV ‡ Max RDS(on)=100m: at VGS =10V,ID =8A ‡ Fast Switching Speed ‡ Low

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() CRSZ019N10N4 SkyMOS4 N-MOSFET 100V, 1.75mΩ, 248A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exce

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 MT19N10  1 &KDQQHO93RZHU02 6)(7 )HDWXUHV ‡ Typ RDS(on)=90m:(typ)@ VGS =10V,ID=8A ‡ Fast Switching Speed ‡ Low

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FQPF19N10 — N-Channel QFET® MOSFET October 2013 FQPF19N10 N-Channel QFET® MOSFET 100 V, 13.6 A, 100 mΩ Description This N-Channel enhancement mode p

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Silicon N-Channel Power MOSFET ○R CS19N10 A8 General Description： CS19N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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UNISONIC TECHNOLOGIES CO., LTD 19N10 100V N-Channel MOSFET „ DESCRIPTION Power MOSFET The UTC 100V N-Channel enhancement mode power field effect tra

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FQP19N10 August 2000 QFET FQP19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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FQB19N10 / FQI19N10 August 2000 QFET FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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FQB19N10L / FQI19N10L August 2000 QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power

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FQB19N10L / FQI19N10L August 2000 QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power

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FQD19N10 — N-Channel QFET® MOSFET FQD19N10 N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ November 2013 Description This N-Channel enhancement mode p

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FQD19N10 / FQU19N10 August 2000 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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FQD19N10L / FQU19N10L August 2000 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power

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UNISONIC TECHNOLOGIES CO., LTD 19N10V 100V N-Channel MOSFET „ DESCRIPTION Power MOSFET The U TC 100V N-Chan nel enhancement mode po wer fiel d effec

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FQD19N10L — N-Channel QFET® MOSFET FQD19N10L N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ November 2013 Description This N-Channel enhancement mode

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FQB19N10 / FQI19N10 August 2000 QFET FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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Silicon N-Channel Power MOSFET ○R CS19N10 A0 General Description： CS19N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

(8 views)

FQP19N10L August 2000 QFET FQP19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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