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19N10 Datasheet, Features, Application

19N10 N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 19N10 100V N-Channe.

Unisonic Technologies

19N10 - N-CHANNEL POWER MOSFET

 UNISONIC TECHNOLOGIES CO., LTD 19N10 100V N-Channel MOSFET „ DESCRIPTION Power MOSFET The UTC 100V N-Channel enhancement mode power field effect tra.
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MOS-TECH

MT19N10 - N-Channel Powe MOSFET

 MOS-TECH Semiconductor Co.,LTD MT19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power f ield effect transistors ar.
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UNISONIC TECHNOLOGIES

19N10V - 100V N-Channel MOSFET

 UNISONIC TECHNOLOGIES CO., LTD 19N10V 100V N-Channel MOSFET „ DESCRIPTION Power MOSFET The U TC 100V N-Chan nel enhancement mode po wer fiel d effec.
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Fairchild Semiconductor

FQB19N10 - 100V N-Channel MOSFET

 FQB19N10 / FQI19N10 August 2000 QFET FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe.
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Fairchild Semiconductor

FQB19N10L - 100V LOGIC N-Channel MOSFET

 FQB19N10L / FQI19N10L August 2000 QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power .
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Fairchild Semiconductor

FQD19N10 - N-Channel MOSFET

 FQD19N10 — N-Channel QFET® MOSFET FQD19N10 N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ November 2013 Description This N-Channel enhancement mode p.
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Fairchild Semiconductor

FQD19N10L - N-Channel MOSFET

 FQD19N10L — N-Channel QFET® MOSFET FQD19N10L N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ November 2013 Description This N-Channel enhancement mode.
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Fairchild Semiconductor

FQI19N10 - 100V N-Channel MOSFET

 FQB19N10 / FQI19N10 August 2000 QFET FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe.
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Fairchild Semiconductor

FQI19N10L - 100V LOGIC N-Channel MOSFET

 FQB19N10L / FQI19N10L August 2000 QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power .
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Fairchild Semiconductor

FQP19N10 - 100V N-Channel MOSFET

 FQP19N10 August 2000 QFET FQP19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.
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Fairchild Semiconductor

FQP19N10L - 100V LOGIC N-Channel MOSFET

 FQP19N10L August 2000 QFET FQP19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors.
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Fairchild Semiconductor

FQPF19N10 - 100V N-Channel MOSFET

 FQPF19N10 — N-Channel QFET® MOSFET October 2013 FQPF19N10 N-Channel QFET® MOSFET 100 V, 13.6 A, 100 mΩ Description This N-Channel enhancement mode p.
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Fairchild Semiconductor

FQPF19N10L - 100V LOGIC N-Channel MOSFET

 FQPF19N10L August 2000 QFET FQPF19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transisto.
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Fairchild Semiconductor

FQU19N10 - 100V N-Channel MOSFET

 FQD19N10 / FQU19N10 August 2000 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe.
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Fairchild Semiconductor

FQU19N10L - 100V LOGIC N-Channel MOSFET

 FQD19N10L / FQU19N10L August 2000 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power .
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Samwin

SWD19N10 - N-Channel MOSFET

 www.DataSheet.co.kr SAMWIN SW19N10 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv.
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SAMWIN

SW19N10 - N-channel MOSFET

 SAMWIN SW19N10 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100%.
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CR Micro

CS19N10A0 - Silicon N-Channel Power MOSFET

 Silicon N-Channel Power MOSFET ○R CS19N10 A0 General Description： CS19N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den.
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CR Micro

CS19N10A8 - Silicon N-Channel Power MOSFET

 Silicon N-Channel Power MOSFET ○R CS19N10 A8 General Description： CS19N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den.
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CR Micro

CRSZ019N10N4Z - SkyMOS4 N-MOSFET

 () CRSZ019N10N4Z SkyMOS4 N-MOSFET 100V, 1.75mΩ, 248A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exc.
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