www.DataSheet4U.com VCES Low VCE(sat) High speed .
JILIN SINO
TT025N120EQ - N-CHANNEL IGBT
N N-CHANNEL IGBT R TT025N120EQ MAIN CHARACTERISTICS IC 25 A VCES 1200V Vcesat-ty（p Vge=15V） 1.9V Package UPS Trench FS , , VCE.
Fairchild Semiconductor
FGA25N120ANTDTU - IGBT
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co.
Fairchild Semiconductor
FGA25N120AN - IGBT
www.DataSheet4U.com FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conductio.
Fairchild Semiconductor
FGA25N120ANTD - NPT Trench IGBT
FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Tem.
Slkor
SL25N120P - Trench NPT IGBT
1200V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig.
KEDA
KDG25N120H1 - IGBT
KDG25N120H1 IGBT Features 1200V,25A,VCE(sat)(typ.)=2.5V@VGE=15V High speed switching Higher system efficiency Soft current turn-off waveforms.
UTC
UTG25N120 - 1200V NPT IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT DESCRIPTION The UTC UTG25N120 is a.
UTC
UTG25N120-G2 - 1200V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG25N120-G2 Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UTG25N120-G2.
KEC
KGT25N120KDA - NPT IGBT
SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness..
Fairchild Semiconductor
FGA25N120AND - IGBT
FGA25N120AND IGBT FGA25N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching lo.
TRinno
TGAN25N120FDR - Field Stop Trench IGBT
Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
IXYS
IXEH25N120 - NPT3 IGBT
IXEH 25N120 IXEH 25N120D1 www.DataSheet4U.com NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C TO-247 AD G G E E G C E C (TAB) .
Infineon Technologies
K25N120 - Fast IGBT
www.DataSheet.co.kr SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous gene.
ON Semiconductor
NGTB25N120FLWG - IGBT
NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perf.
ON Semiconductor
NGTB25N120LWG - IGBT
NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provide.
Fairchild Semiconductor
FGA25N120FTD - Field Stop Trench IGBT
FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT March 2013 FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Features • Field Stop Trench Technolog.
Infineon
IGW25N120H3 - IGBT
IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching se.
Infineon Technologies
IKW25N120H3 - IGBT
IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW25N120H3 1200V high speed switching .
Slkor
SL25N120FL - Trench NPT IGBT
1200V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z Hig.
ON Semiconductor
FGA25N120ANTDTU-F109 - NPT Trench IGBT
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co.