25N120 Datasheet | Specifications & PDF Download

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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Low V CE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol Test Conditions VCES VCGR VGES

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FGW25N120WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 1200V / 25A Features Low power lo

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http://www.fujielectric.com/products/semiconductor/ FGW25N120WD Discrete IGBT (High-Speed W series) 1200V / 25A Features Low power loss Low switching

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Low V CE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol Test Conditions VCES VCGR VGES

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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

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www.DataSheet.co.kr SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous gene

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www.DataSheet4U.com FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conductio

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Tem

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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BRG25N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features 、、、RoHS 。 L

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IXEH 25N120 IXEH 25N120D1 www.DataSheet4U.com NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C TO-247 AD G G E E G C E C (TAB)

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SEMICONDUCTOR TECHNICAL DATA KGT25N120NDA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ru

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si

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NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi

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FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT March 2013 FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Features • Field Stop Trench Technolog

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KDG25N120H1 IGBT Features  1200V,25A,VCE(sat)(typ.)=2.5V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms

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UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UTG25N120 is a

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