2N60A Datasheet | Specifications & PDF Download

SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.0Ω ID 2A G UIS, 100% Tested S

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SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si

Rating: 1 ★ (6 votes)

www.vishay.com SiHB22N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (n

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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 4.0Ω ID 2A G UIS, 100% Tested S

Rating: 1 ★ (5 votes)

Silicon N-Channel Power MOSFET CS2N60 A4T ○R General Description： CS2N60 A4T, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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IXGH 32N60AU1 IXGH 32N60AU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.9V 125 ns TO-247 SMD (32N60AU1S)

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IGBT with Diode Combi Pack Short Circuit SOA Capability IXSN 52N60AU1 VCES IC25 VCE(sat) 3 2 = 600 V = 80 A = 3V 4 www.DataSheet4U.com 1 Symbol V

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www.vishay.com SiHA22N60AE Vishay Siliconix E Series Power MOSFET D Thin-Lead TO-220 FULLPAK G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V)

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Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt

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Silicon N-Channel Power MOSFET CS12N60 A8HD ○R XGeneral Description： CS12N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

Rating: 1 ★ (4 votes)

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss •

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AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss •

Rating: 1 ★ (4 votes)

Advanced Power MOSFET SSR/U2N60A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte

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SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1

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isc N-Channel MOSFET Transistor AOI2N60A FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

Rating: 1 ★ (4 votes)