2N60A Datasheet | Specifications & PDF Download

Preliminary Technical Information GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGN72N60A3 E VCES = IC110 = VCE(sat) ≤ 600V 6

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SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 4.0Ω ID 2A G UIS, 100% Tested S

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Silicon N-Channel Power MOSFET ○R CS2N60 A4HY General Description： CS2N60 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Silicon N-Channel Power MOSFET ○R CS2N60 A4RZ-G General Description： CS2N60 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the

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SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si

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Silicon N-Channel Power MOSFET ○R CS2N60 A4RZ-G General Description： CS2N60 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the

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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60

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SEMICONDUCTOR 2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (2A, 600Volts) DESCRIPTION The Nell 2N60 is a three-terminal sili

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Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt

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SEMICONDUCTOR 2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (2A, 600Volts) DESCRIPTION The Nell 2N60 is a three-terminal sili

(15 views)

Silicon N-Channel Power MOSFET ○R CS2N60 A4R General Description： CS2N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A a

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.0Ω ID 2A G UIS, 100% Tested S

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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isc N-Channel MOSFET Transistor AOI2N60A FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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Silicon N-Channel Power MOSFET CS2N60 A4H ○R General Description： VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt

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www.DataSheet.co.kr GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH72N60A3 IXGT72N60A3 VCES = IC110 = VCE(sat) ≤ tfi(typ) =

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