2N70 Datasheet | Specifications & PDF Download

2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier ap

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2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

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TSM2N7000 60V N-Channel MOSFET SOT-92 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V ID (mA) 500 Fe

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input r

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Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP12N70X2M VDSS = ID25 =  RDS(on) 700V 12A 300m N-Channel

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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V

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N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are

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UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET design

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UNISONIC TECHNOLOGIES CO., LTD 2N70-HC Preliminary 2A, 700V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 2N70-HC is a high voltage p

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NP2N7002 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2N7002 has been designed to minimize the on-state resistance (RD

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UNISONIC TECHNOLOGIES CO., LTD 2N70-CA 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-CA is a high voltage MOSFET designed to have better

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www.DataSheet4U.com ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F G2N7000 Description N-CHANNEL ENHANCEMENT MODE MOSFET The G2N7000 is designed

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UNISONIC TECHNOLOGIES CO., LTD 2N70-CB Preliminary 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-CB is a high voltage MOSFET designed

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N70X2 IXTP12N70X2 IXTH12N70X2 VDSS = ID25 =  RDS(on) 700

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–723 • Pb−Free Package is Available. • ESD Protected:2000V • S- Pr

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kw ME2N7002DKW-G Dual N - Channel 60V (D-S) MOSFET, ESD Protection Protected GENERAL DESCRIPTION The ME2N7002DKW-G is the Dual N-Channel logic enhan

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