2SD130 Datasheet | Specifications & PDF Download

Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 5.0±0.2 4.0±0.2 s

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ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in differen

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Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter ■ Features • Low collector-

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage- :VCEO(S

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1307 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 350V(Min) ·High DC cur

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Inchange Semiconductor Product Specification www.DataSheet4U.com Silicon NPN Power Transistors 2SD1308 DESCRIPTION ·With TO-220 package ·Low colle

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Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification s Features q Zener diode built in. q Mini type package, allowing

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Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification s Features q Zener diode built in. q Mini type package, allowing

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1308 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·Low coll

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2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 2 1. Emitter 2.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 2A ·Collector-Emitter Sustaining Voltage- :VCEO(S

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ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in differen

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Volt

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1300 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Co

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low

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2SD1306 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Prelimi

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