320-Channel Datasheet | Specifications & PDF Download

IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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P3202CMA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 32mΩ @VGS = 4.5V ID 5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA =

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Supertex inc. Low Charge Injection 8-Channel High Voltage Analog Switch HV20320 Features ►►HVCMOS® technology for high performance ►►Very low quiesc

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Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►►Free from secondary breakdown ►►Low power drive

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N N-CHANNEL MOSFET R JCS3205H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ   UPS 110 A 55 V 8 mΩ 78nC APPLICATIONS  H

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HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia

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HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VG

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3207， IIRFB3207 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement

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CMP3205A / CMB3205A N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 3205A is a N-channel Power MOSFET.

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Silicon N-Channel Power MOSFET ○R CS3205 B8 General Description： VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID（Silicon limited curren

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SM7320ESQG ® Dual N-Channel Enhancement Mode MOSFET Features • Channel 1 30V/64A, R DS(ON) = 5.2mΩ (max.) @ V GS = 10V RDS(ON) = 7.5mΩ (m

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SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF3205 is a three-ter

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IS32FL3207 18-CHANNEL LED DRIVER WITH 16-BIT PWM May 2024 GENERAL DESCRIPTION IS32FL3207 is an LED driver with 18 constant current channels. Each ch

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1ED332xMC12N (1ED-F3) EiceDRIVER™ 1ED332xMC12N Enhanced (1ED-F3) Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with DESAT and soft-off

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MT3206 MOS-TECH Semiconductor Co.,LTD MT3206 60V N-Channel MOSFET QFET TM General Description These N-Channel enhancem ent m ode power field effec

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SW3205B N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 4.8mΩ)@VGS=10V  Low Gate Charge (Typ 80nC)  Im

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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