320-Channel Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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Ordering number : EN*A1630 www.DataSheet4U.com Thick-Film Hybrid IC STK433-290-E Overview 3-channel class AB audio power IC, 80W+80W+80W The STK4

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FH3204G SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Enhancement Mode Power MOSFET Description The FH3204G uses advanced Shielded Gate trenc

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3207， IIRFB3207 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement

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CMP3205A / CMB3205A N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 3205A is a N-channel Power MOSFET.

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October 1997 FDC6320C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effec transist

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www.DataSheet4U.com N-Channel Enhancement Mode Field Effect Transistor FEATURES 55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V. Super high dense cell design

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www.DataSheet.co.kr SAMWIN SW3205 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved

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 MT3203 1 &KDQQHO /RZ4JŠ 026)(7 9 $  PΩ   *HQHUDO'HVFULSWLRQ 7KLV1 &KDQQHO026)(7KDVEHHQGHVLJQHGVSHFLILFD

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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P3203CMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 32mΩ @VGS = 4.5V ID 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25

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SW3205B N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 4.8mΩ)@VGS=10V  Low Gate Charge (Typ 80nC)  Im

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BSP 320 S SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D

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HRF3205, HRF3205S Data Sheet December 2001 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power fie

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2SK3205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor

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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista

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IRFD320 Data Sheet July 1999 File Number 2325.4 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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P3203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 32mΩ @VGS = -10V ID -8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA

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