3DD15 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor 3DD15D DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY R 3DD1555P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500

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1 3DD1545 NPN , 21 3DD1545 2 2.1 2.2 TO-3P(H)IS Tamb= 25 - Ta=25 Tc=25 VCE0 600 V VCB0 1500 V VEB0 5 V IC 5 A 3 Ptot 50 W Tj

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159C DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159E DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159B DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD159A DESCRIPTION ·With TO-3 packaging ·Large collector current

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE

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3DD157 NPN PCM ICM Tjm Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VBEsat VCEsat hFE TC=75℃ VCE=10V IC=1A ICB=3mA ICE=3mA IEB=1m

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159F DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159D DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max) P

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isc Silicon NPN Power Transistor 3DD15B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~250(Min

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