isc Silicon NPN Power Transistor DESCRIPTION ·Co.
Inchange Semiconductor
3DD15 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A.
INCHANGE
3DD159C - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159C DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
INCHANGE
3DD159D - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159D DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
INCHANGE
3DD159B - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159B DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
JILIN SINO
3DD1555A - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max.
JILIN SINO
3DD1555P - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY R 3DD1555P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 .
ETC
3DD157 - Low-frequency silicon NPN power transistor
3DD157 NPN PCM ICM Tjm Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VBEsat VCEsat hFE TC=75℃ VCE=10V IC=1A ICB=3mA ICE=3mA IEB=1m.
Huajing Microelectronics
3DD1545 - NPN Transistor
1 3DD1545 NPN , 21 3DD1545 2 2.1 2.2 TO-3P(H)IS Tamb= 25 - Ta=25 Tc=25 VCE0 600 V VCB0 1500 V VEB0 5 V IC 5 A 3 Ptot 50 W Tj .
INCHANGE
3DD159F - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159F DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .
INCHANGE
3DD159A - NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD159A DESCRIPTION ·With TO-3 packaging ·Large collector current .
INCHANGE
3DD15D - NPN Transistor
isc Silicon NPN Power Transistor 3DD15D DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.
Inchange Semiconductor
3DD155 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1.
JILIN SINO
3DD1555 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max) P.
Inchange Semiconductor
3DD15A - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE.
Inchange Semiconductor
3DD15C - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE.
Inchange Semiconductor
3DD15B - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor 3DD15B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~250(Min.
INCHANGE
3DD159E - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD159E DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation .