3DF Datasheet | Specifications & PDF Download

Bluetooth Headset IC - WS9623AB3DF Datasheet Version: V1.2, Sep 2014 110/F 530 Tower, QingYuan Road, TaiHu International Technology Park, WuXi New Dis

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TO-247-3L NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 28 February 2025 Product data sheet 1. Genera

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MD1803DFX High voltage NPN Power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhance

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isc Silicon NPN Power Transistor DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (

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High Voltage Ceramic Disc Capacitors SPECIFICATION No: WM-S050104-C01 MENTION ITEM 1. Scope 2. Relative Standards 3. Quality 4. Operating Themperat

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This product complies with the RoHS Directive (EU 2002/95/EC). Fast Recovery Diodes (FRD) MA3DF46 Silicon mesa type For high frequency recification F

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High Voltage Ceramic Disc Capacitors SPECIFICATION No: WM-S050104-C01 MENTION ITEM 1. Scope 2. Relative Standards 3. Quality 4. Operating Themperat

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www.DataSheet.co.kr Preliminary 2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83DFR-xxC H5TQ2G63DFR-xxC H5TQ2G83DFR-x

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2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83DFR-xxC H5TQ2G63DFR-xxC H5TQ2G83DFR-xxI H5TQ2G63DFR-xxI H5TQ2G83DFR-xx

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TCR3DF series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DF series 300 mA CMOS Low Drop-Out Regulator with inrush current protecti

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High Voltage Ceramic Disc Capacitors SPECIFICATION No: WM-S050104-C01 MENTION ITEM 1. Scope 2. Relative Standards 3. Quality 4. Operating Themperat

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Low Power-Loss Voltage Regulators PQ3DF53 PQ3DF53 3.3V Output, High Output Current (5A) Type Low Power-loss Voltage Regulator s Features ¡TO-3P pack

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This product complies with RoHS Directive (EU 2002/95/EC). Fast Recovery Diodes (FRD) MA3DF40 Silicon Mesa type For high frequency rectification For

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Type DCMC 85 °C High Capacitance, Screw Terminal, Aluminum Highest Capacitance Screw Terminal Type With more capacitance and often more ripple-current

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DF1D DESCRIPTION ·With TO-66 packaging ·Large collector current ·

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1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G83DFR-xxL H5TQ1G83DFR-xxJ H5TQ1G63DFR-xx

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Datasheet 7 Circuits Darlington Transistor Array BA12003DF-Z BA12004DF-Z General Description BA12003DF-Z, BA12004DF-Z are darlington transistor arra

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TO-247-3 NGW30T65M3DFP 650 V, 30 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General de

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TO-247-3L NGW40T65H3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General d

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