3DF Datasheet | Specifications & PDF Download

Bluetooth Headset IC - WS9623AB3DF Datasheet Version: V1.2, Sep 2014 110/F 530 Tower, QingYuan Road, TaiHu International Technology Park, WuXi New Dis

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LM3033DFW-0B-1 LCD Module User Manual Prepared by: Cai Date: 2008-06-20 Checked by: Date: Rev. Descriptions 0.1 Preliminary New release Approved b

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LM3033DFW-0B LCD Module User Manual Shenzhen TOPWAY Technology Co., Ltd. Rev. Descriptions 0.1 Preliminary New release URL: www.topwaydisplay.com ww

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isc Silicon NPN Power Transistor DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (

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MD1803DFX High voltage NPN Power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhance

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TO-247-3L NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 28 February 2025 Product data sheet 1. Genera

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www.DataSheet4U.com MD2103DFP High voltage NPN power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ ■ State-of-the-art technology

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MD1803DFP www.datasheet4u.com High voltage NPN Power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ ■ State-of-the-art technolog

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MD1803DFH High voltage NPN Power transistor for standard definition CRT display Features ■ State-of-the-art technology: – Diffused collector “enhanc

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TO-247-3 NGW50T65H3DFP 650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode Rev. 1 — 28 June 2024 Product data sheet 1. G

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TO-247-3 NGW50T65M3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 7 March 2025 Product data sheet 1. General des

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TO-247-3L NGW40T65H3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General d

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isc Silicon NPN Power Transistor DESCRIPTION · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·100% aval

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TO-247-3L NGW75T65H3DF 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode Rev. 1 — 28 June 2024 Product data sheet 1. G

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® ST1803DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS s NEW SERIES, ENHANCED PERFORMAN

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PCMF2DFN1; PCMF3DFN1 Common-mode EMI filter for differential channels with integrated ESD protection Rev. 2 — 28 April 2014 Product data sheet 1.

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NGB15T65M3DFP 650 V, 15 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 6 June 2025 Product data sheet 1. General description NGB1

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TO-247-3L NGW60T65M3DFP 650 V, 60 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General d

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