UNISONIC TECHNOLOGIES CO., LTD 3N90-E 3.0A, 900V N.
FQB3N90 - 900V N-Channel MOSFET
FQB3N90 / FQI3N90 September 2000 QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec.SSS3N90A - Advanced Power MOSFET
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 900V D RDSON (MAX.) 4Ω ID 3.5A G UIS, 100%.HFS3N90 - N-Channel MOSFET
HFP3N90_HFS3N90 Oct 2016 HFP3N90 / HFS3N90 900V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Ve.FQI3N90 - 900V N-Channel MOSFET
FQB3N90 / FQI3N90 September 2000 QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec.FQP3N90 - 900V N-Channel MOSFET
FQP3N90 September 2000 QFET FQP3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.IXFM13N90 - Power MOSFET
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V.3N90 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 3N90 ·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage-.CS3N90A4H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS3N90 A4H ○R General Description: CS3N90 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.CS3N90FA9H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS3N90F A9H ○R General Description: CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-ali.IXFH13N90 - Power MOSFETs
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Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TM.TMD3N90G - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TM.TMD3N90 - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TM.TMU3N90 - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TM.