N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B.
JILIN SINO-MICROELECTRONICS
JCS4N60BB - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC LED APPLICATIO.
MagnaChip
MDI4N60B - N-Channel Trench MOSFET
MDD4N60B / MDI4N60B N-channel MOSFET 600V MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω General Description The MDD/I4N60B uses advanced Magn.
IXYS Corporation
IXGH24N60B - HiPerFAST IGBT
HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES 500 V 600 V I C(25) 48 A 48 A VCE(sat) 2.3 V 2.5 V tfi 80 ns 80 ns Preliminary data www.DataSheet4U..
IXYS
IXST24N60B - High Speed IGBT
High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V.
angstrem
ANP4N60B - N-Chanel Power MOSFET
N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC.
IXYS
IXSP24N60B - High Speed IGBT
High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSP 24N60B VCES IC25 V CE(sat) = 600 V = 48 A = 2.5 V tfi typ = 170 ns Symbo.
MagnaChip
MDF4N60B - N-Channel Trench MOSFET
MDF4N60B N-channel MOSFET 600V MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced Mag.
IPS
ITU04N60B - N-Channel MOSFET
N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi.
Fairchild Semiconductor
SSP4N60B - 600V N-Channel MOSFET
SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.
Fairchild Semiconductor
SSW4N60B - 600V N-Channel MOSFET
SSW4N60B / SSI4N60B November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .
IXYS Corporation
IXGH24N60BU1 - HiPerFAST IGBT
HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol www.DataSheet4U.com Test Conditions TJ = 2.
IXYS
IXSH24N60BD1 - High Speed IGBT
High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V.
IXYS
IXST24N60BD1 - High Speed IGBT
High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V.
angstrem
4N60B - N-Chanel Power MOSFET
N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC.
angstrem
ANB4N60B - N-Chanel Power MOSFET
N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC.
angstrem
AND4N60B - N-Chanel Power MOSFET
N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC.
angstrem
ANI4N60B - N-Chanel Power MOSFET
N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC.
angstrem
ANU4N60B - N-Chanel Power MOSFET
N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC.
Fairchild Semiconductor
4N60B - 600V N-Channel MOSFET
SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.