4N60B Datasheet | Specifications & PDF Download

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V

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R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max （Vgs=10V） Qg-typ 4.0 A 600 V 2.35Ω 11.8nC    LED APPLICATIONS  Hi

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GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE(sat) tfi(typ) = 600V = 64

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MDF4N60B N-channel MOSFET 600V MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced Mag

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WFD4N60B Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B V(BR)DSS 600V 600V N-Channel Power MOSFET RDS(on)M

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MDD4N60B / MDI4N60B N-channel MOSFET 600V MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω General Description The MDD/I4N60B uses advanced Magn

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CYStech Electronics Corp. Spec. No. : C128E3 Issued Date : 2016.03.21 Revised Date : 2017.04.05 Page No. : 1/ 10 N-Channel Enhancement Mode Power MO

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600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 14.7nC)  Fast Switching  100% Avalanche Tested  RoHS Complian

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SSW4N60B / SSI4N60B November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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www.DataSheet4U.com SSR4N60B / SSU4N60B November 2001 SSR4N60B / SSU4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mod

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www.DataSheet4U.com SSR4N60B / SSU4N60B November 2001 SSR4N60B / SSU4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mod

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HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES 500 V 600 V I C(25) 48 A 48 A VCE(sat) 2.3 V 2.5 V tfi 80 ns 80 ns Preliminary data www.DataSheet4U.

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HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol www.DataSheet4U.com Test Conditions TJ = 2

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