4N60B Datasheet | Specifications & PDF Download

SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V

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MDF4N60B N-channel MOSFET 600V MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced Mag

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CYStech Electronics Corp. Spec. No. : C128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N6

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CYStech Electronics Corp. Spec. No. : C128FP Issued Date : 2015.05.11 Revised Date : 2016.02.18 Page No. : 1/ 10 N-Channel Enhancement Mode Power MO

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CYStech Electronics Corp. Spec. No. : C128E3 Issued Date : 2016.03.21 Revised Date : 2017.04.05 Page No. : 1/ 10 N-Channel Enhancement Mode Power MO

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CYStech Electronics Corp. Spec. No. : C128J3 Issued Date : 2015.05.28 Revised Date : 2015.05.29 Page No. : 1/11 N-Channel Enhancement Mode Power MOS

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GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE(sat) tfi(typ) = 600V = 64

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High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V

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High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V

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HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol www.DataSheet4U.com Test Conditions TJ = 2

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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MDD4N60B / MDI4N60B N-channel MOSFET 600V MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω General Description The MDD/I4N60B uses advanced Magn

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HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES 500 V 600 V I C(25) 48 A 48 A VCE(sat) 2.3 V 2.5 V tfi 80 ns 80 ns Preliminary data www.DataSheet4U.

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High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V

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High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V

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Preliminary Technical Information GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs for 5 - 40kHz switching IXGH64N60B3* IXGT64N60B3 *Obsolete Part N

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CJD04N60B TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed

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High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSP 24N60B VCES IC25 V CE(sat) = 600 V = 48 A = 2.5 V tfi typ = 170 ns Symbo

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