5.9W Datasheet | Specifications & PDF Download

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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www.DataSheet4U.com ISSUED DATE :2004/09/24 REVISED DATE : G S B AV 9 9 W Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A

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SCHEMATIC DIAGRAM-3 B MAIN CIRCUIT D756 MA700ATA D757 MA700ATA : POSITIVE VOLTAGE LINE : NEGATIVE VOLTAGE LINE 7.6V -10.4V :AUDIO SIGNAL LINE 7.6V

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TB2926CHQ TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2926CHQ 49 W × 4-ch BTL Audio Power IC The TB2926CHQ is a four-channel BTL p

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HT876 10.9W×2   ・ ， ・ ・（PBTL） ・ABD ・THD+N: 0.02%（VDD = 8.4V, RL = 4Ω, fIN = 1kHz, Po = 2×1.0W, BTL） ・(fIN = 1kHz, THD+N = 10%) 2×10.9W (V

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MCC
     omponents TM 20736 Marilla Street Chatsworth Micro Commercial Components  # $ %

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Pb RoHS COMPLIANCE BAV19W - BAV21W 250mW Surface Mount Switching Diode SOD-123 Features — Fast switching speed — Surface mount package ideally suite

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Date:- 03 August 2012 Data Sheet Issue:- K1 Fast Turn-off Thyristor Types P0389WC04# & P0389WC08# Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOL

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1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L

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FTR-K1 SERIES COMPACT POWER TWIN RELAY 1 POLE x 2 - 25A, H-Bridge (for automotive applications) FTR-P4 Series n FEATURES l Compact for high density

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isc N-Channel MOSFET Transistor 2SK3549W FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-R

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FTR-K1 SERIES SILENT TWIN RELAY 1 POLE x 2 - 25A, H-Bridge (for automotive applications) FTR-P2 Series n FEATURES l Low operating sound An original si

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BAV99 series High-speed switching diodes Rev. 8 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switchi

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Date:- 03 August 2012 Data Sheet Issue:- K1 Fast Turn-off Thyristor Types P0389WC04# & P0389WC08# Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOL

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Alfa-MOS Technology General Description AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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BC846W BC849W BC846W BC849W SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE ~ 180/290/520 Tjmax = 150°C

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Automotive Audio Bus (A2B) Transceiver AD2420/AD2426/AD2427/AD2428/AD2429 A2B BUS FEATURES Line topology Single main node, multiple subordinate node

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Production specification Surface Mount Switching Diode BAS19W/BAS20W/BAS21W FEATURES  Fast switching speed.  High conductance. Pb Lead-free  Fo

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HITANO ENTERPRISE CORP. BAS16W THRU BAS21W TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2

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