5N25 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET ○R CS65N25 ANR General Description： VDSS 250 CS65N25 ANR, the silicon N-channel Enhanced ID 65 VDMOSFETs, is ob

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Silicon N-Channel Power MOSFET ○R CS65N25 AKR General Description： VDSS 250 CS65N25 AKR, the silicon N-channel Enhanced ID 65 VDMOSFETs, is ob

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High Voltage IGBT For Capacitor Discharge Applications Advance Technical Information MMIX1G75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Elect

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5N25E/D Designer's TMOS E-FET .™ Power Field Effect Transisto

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Advance Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGT25N250HV VCES = IC110 = VCE(sat) ≤ 2500V 25A 2.9V TO-268

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High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information MMIX1Y25N250CV1 VCES = IC110 = VCE(sat)  2500V 18A 4.0

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High Voltage XPTTM IGBT IXYT25N250CHV IXYH25N250CHV VCES = 2500V IC110 = 25A VCE(sat)  4.0V t = 246ns fi(typ) Symbol VCES V CGR VGES VGEM

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N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell

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MTD5N25E TMOS E−FET.™ Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designe

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Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75

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Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75

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N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGL75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Ele

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High Voltage XPTTM IGBT w/ Diode IXYX25N250CV1 IXYX25N250CV1HV VCES = 2500V I = 25A C110 V  4.0V CE(sat) tfi(typ) = 246ns PLUS247 (IXYX)

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H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistanc

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High Voltage XPTTM IGBT w/ Diode IXYX25N250CV1 IXYX25N250CV1HV VCES = 2500V I = 25A C110 V  4.0V CE(sat) tfi(typ) = 246ns PLUS247 (IXYX)

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High Voltage XPTTM IGBT IXYT25N250CHV IXYH25N250CHV VCES = 2500V IC110 = 25A VCE(sat)  4.0V t = 246ns fi(typ) Symbol VCES V CGR VGES VGEM

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ME15N25-VB ME15N25-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (n

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ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25 is the N-Channel logic enhancement mode power field effect transistor

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60

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