5N25 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET ○R CS65N25 ANR General Description： VDSS 250 CS65N25 ANR, the silicon N-channel Enhanced ID 65 VDMOSFETs, is ob

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Silicon N-Channel Power MOSFET ○R CS65N25 AKR General Description： VDSS 250 CS65N25 AKR, the silicon N-channel Enhanced ID 65 VDMOSFETs, is ob

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Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75

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Advance Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGT25N250HV VCES = IC110 = VCE(sat) ≤ 2500V 25A 2.9V TO-268

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High Voltage XPTTM IGBT w/ Diode IXYX25N250CV1 IXYX25N250CV1HV VCES = 2500V I = 25A C110 V  4.0V CE(sat) tfi(typ) = 246ns PLUS247 (IXYX)

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Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75

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High Voltage XPTTM IGBT IXYT25N250CHV IXYH25N250CHV VCES = 2500V IC110 = 25A VCE(sat)  4.0V t = 246ns fi(typ) Symbol VCES V CGR VGES VGEM

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High Voltage XPTTM IGBT w/ Diode IXYX25N250CV1 IXYX25N250CV1HV VCES = 2500V I = 25A C110 V  4.0V CE(sat) tfi(typ) = 246ns PLUS247 (IXYX)

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H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistanc

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High Voltage XPTTM IGBT IXYT25N250CHV IXYH25N250CHV VCES = 2500V IC110 = 25A VCE(sat)  4.0V t = 246ns fi(typ) Symbol VCES V CGR VGES VGEM

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Silicon N-Channel Power MOSFET ○R CS45N25FA9R-G General Description： CS45N25FA9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60

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  QFET  % % % % % % &&' (&)* +
 , ) )-Ω .* , /) * 0      1     /-) 2 0   1     /

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H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistanc

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGL75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Ele

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www.DataSheet4U.com H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance

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H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistanc

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H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005 Features www.DataSheet4

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