5N25 Datasheet | Specifications & PDF Download

Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGL75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Ele

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Silicon N-Channel Power MOSFET ○R CS65N25 ANR General Description： VDSS 250 CS65N25 ANR, the silicon N-channel Enhanced ID 65 VDMOSFETs, is ob

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60

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Advance Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGT25N250HV VCES = IC110 = VCE(sat) ≤ 2500V 25A 2.9V TO-268

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60

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SUM45N25-58-E3-VB SUM45N25-58-E3-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 250 RDS(on) () 0.040 at

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBX25N250 VCES = IC90 = VCE(sat) ≤ 2500V 25A 3.3V Symbol VCES VCGR VGES VGEM

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Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75

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High Voltage XPTTM IGBT w/ Diode IXYX25N250CV1 IXYX25N250CV1HV VCES = 2500V I = 25A C110 V  4.0V CE(sat) tfi(typ) = 246ns PLUS247 (IXYX)

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Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60

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High Voltage XPTTM IGBT IXYT25N250CHV IXYH25N250CHV VCES = 2500V IC110 = 25A VCE(sat)  4.0V t = 246ns fi(typ) Symbol VCES V CGR VGES VGEM

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ME15N25-VB ME15N25-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (n

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High Voltage IGBT For Capacitor Discharge Applications Advance Technical Information MMIX1G75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Elect

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New Product SUM45N25-58 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 250 0.058 at VGS = 10 V 0.

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High Voltage XPTTM IGBT IXYT25N250CHV IXYH25N250CHV VCES = 2500V IC110 = 25A VCE(sat)  4.0V t = 246ns fi(typ) Symbol VCES V CGR VGES VGEM

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High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information MMIX1Y25N250CV1 VCES = IC110 = VCE(sat)  2500V 18A 4.0

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H5N2515P Silicon N Channel MOS FET High Speed Power Switching REJ03G0413-0100 Rev.1.00 Sep.28.2004 Features • Low on-resistance • Low leakage current

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H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar. 2001 Features • Low on-resista

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H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features www

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